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Short Lab-Course


 

 

Magnetotransport (Jülich)

During this lab-course one gets insight into transport measurements of semiconductor structures. It will be possible to perform measurements in a He-3 cryostat as well as in a He-3/He-4 dilution fridge. The principle of operation will be explained in detail. If own samples are available, they can be measured during stay in Jülich.

Contact person: Thomas Schäpers


SQUID Magnetometry (Jülich)

For the characterisation of dilute magnetic semiconductors SQUID (superconducting quantum interference device) measurements are of central importance. By means of a SQUID magnetometer the magnetisation of a semiconductor layer system can be determined as a function of temperatur and of an external magnetic field. In dilute magnetic semiconductors the saturation magnetization of often extremely small. During the lab-course it will be explained how measurements with sufficient sensitivity can be performed and how measurement errors can be prevented.

Contact person: Vitaliy Guzenko

GaN Molecular Beam Epitaxy (Jülich)

Molecular Beam Epitaxy (MBE) is a versatile technique for growing thin epitaxial structures made of semiconductors, metals or insulators. The aim of our work is the fabrication of optimized GaN layers grown on different substrates by MBE, in order to realize semiconductor/ ferromagnet heterostructures for spintronic applications. During the lab course we will discuss the most important aspects of MBE apparatus and the growth mechanisms of GaN-based heterostructures.

Contact person: Raffaella Calarco

MBE and RHEED (Göttingen)

Molecular Beam Epitaxy (MBE) is the technique of creating single-crystalline compund semiconductor films in an ultrahigh vacuum (UHV) enviroment. Complex, multilayer structures can be deposited sequentially onto a heated substrate in a MBE reactor. The composition, thickness, and dopant species of each layer can be independently and very precisely controlled.
In this experiment the growth of GaN will be performed on a GaN template layer in a Modular Gen II MBE system. The MBE process for GaN critically depends on the Ga and N flux parameters, which have to be set up for optimum growth conditions. Reflection High Energy Electron Diffraction (RHEED) allows to control the substrate surface preparation and furthermore to follow the growth in real time. The diffraction pattern, in particular the intensity oscillations of the reflected spot are quantitatively analyzed to determine the growth rate of GaN and the Ga flux for optimum growth. .


Contact person: Angela Rizzi

More offers will be announced soon...
 


By organizing short laboratory visits (1-2 days) diploma and Ph.D. students are given the opportunity to get deeper insight in the experimental methods available at the partner institutions in Aachen, Göttingen and Jülich.

Interested students are asked to contact the persons in charge directly to get an appointment.

GaN molecular beam epitaxy in Jülich
(R. Calarco und K.-H. Deussen)

Copyright   Forschungszentrum Jülich
D-52425 Jülich

RWTH Aachen
Uni Göttingen

 

Contact Imprint 12.12.2012
 VISel