In Jülich the research on spinelectronics focuses on the growth of magnetic
layers based on GaN/AlGaN heterojunctions. By using molecular beam epitaxy
(MBE) iron as well as Fe3O4 layers are grown on GaN/AlGaN layer systems.
In addition, the growth of Cr:GaN layers by means of metal-organic vapor
phase epitaxy (MOVPE) is investigated.
In the Jülich
group the properties of the magnetic layers are characterized by transport
measurements at low temperatures, e.g. Hall effect.
Quantum and Spin Electronics (IBN-1)
III-Nitride MBE (IBN-1)