In Jülich the research on spinelectronics focuses on the growth of magnetic layers based on GaN/AlGaN heterojunctions. By using molecular beam epitaxy (MBE) iron as well as Fe3O4 layers are grown on GaN/AlGaN layer systems. In addition, the growth of Cr:GaN layers by means of metal-organic vapor phase epitaxy (MOVPE) is investigated.

In the Jülich group the properties of the magnetic layers are characterized by transport measurements at low temperatures, e.g. Hall effect.


Quantum and Spin Electronics (IBN-1)
III-Nitride MBE (IBN-1)