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Institute for Semiconductor Physics, University of Göttingen


GaN based heterostructures
DMS


The group in Göttingen focuses on the molecular beam epitaxy (MBE) of GaN based dilute magnetic semiconductors, starting with GaMnN.

The microstructure will be investigated by transmission electron microscopy (TEM); a spatial resolved chemical composition is obtained by energy dispersive X-ray analysis (EDX).
The magnetic properties of the grown layers and heterostructures will be measured by temperature dependent Hall effect. In particular the focus will be on the anomalous Hall effect, this latter being a clear proof of the ferromagnetic properties in DMS systems with spin polarized carriers.


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Copyright   Forschungszentrum Jülich
D-52425 Jülich

RWTH Aachen
Uni Göttingen

 

Contact Imprint 12.12.2012
 VISel