The group in Göttingen focuses on the molecular beam epitaxy (MBE)
of GaN based dilute magnetic semiconductors, starting with GaMnN.
microstructure will be investigated by transmission electron microscopy
(TEM); a spatial resolved chemical composition is obtained by energy
dispersive X-ray analysis (EDX).
The magnetic properties of the grown
layers and heterostructures will be measured by temperature dependent
Hall effect. In particular the focus will be on the anomalous Hall
effect, this latter being a clear proof of the ferromagnetic properties
systems with spin polarized carriers.