In the last years, researchers have been attempting to add magnetic impurities
in semiconductors with the aim of integrating magnetism in these important
material systems. Molecular Beam Epitaxy (MBE) has been proved to be
a powerful method for the growth of dilute magnetic semiconductors (DMS).
Two MBE systems
are available in our laboratory. The first one is a Gen II
machine from Veeco with 8 source materials: Ga, Al, In, Si, Mn, TM,
N2 (RF-Plasma Source) and Hydrogen. Reflection High Energy Electron
Diffraction (RHEED) is used fort the in-situ growth characterization.
The other one
is a 3-chamber UHV growth and analysis system. Four source materials
are available in the growth unit: Ga, N2 (RF-Plasma Source), Mn and
Al. The electronic properties as well as the structural properties
surface can be studied in-situ by electron spectroscopy (XPS, UPS,
AES, HREELS) and low energy electron diffraction.
are available for standard characterization of the grown layers: atomic
force microscopy (AFM), X-Ray diffraction (XRD),
resolution scanning electron microscopy (SEM). Magnetotransport is
characterized by a Hall effect apparatus (2-325K, 1T), with focus
on the anomalous
Microscopy (Philips CM 200 FEG-UT with energy dispersive X-ray spectroscopy)
is applied to study the microstructure.