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DMS Molecular Beam Epitaxy


 

Veeco Gen II MBE system

3-chamber UHV system

Hall laboratory



In the last years, researchers have been attempting to add magnetic impurities in semiconductors with the aim of integrating magnetism in these important material systems. Molecular Beam Epitaxy (MBE) has been proved to be a powerful method for the growth of dilute magnetic semiconductors (DMS).

Two MBE systems are available in our laboratory. The first one is a Gen II machine from Veeco with 8 source materials: Ga, Al, In, Si, Mn, TM, N2 (RF-Plasma Source) and Hydrogen. Reflection High Energy Electron Diffraction (RHEED) is used fort the in-situ growth characterization. The other one is a 3-chamber UHV growth and analysis system. Four source materials are available in the growth unit: Ga, N2 (RF-Plasma Source), Mn and Al. The electronic properties as well as the structural properties of the surface can be studied in-situ by electron spectroscopy (XPS, UPS, AES, HREELS) and low energy electron diffraction.

Several methods are available for standard characterization of the grown layers: atomic force microscopy (AFM), X-Ray diffraction (XRD), high resolution scanning electron microscopy (SEM). Magnetotransport is characterized by a Hall effect apparatus (2-325K, 1T), with focus on the anomalous Hall effect.

Transmission Electron Microscopy (Philips CM 200 FEG-UT with energy dispersive X-ray spectroscopy) is applied to study the microstructure.


 

Copyright   Forschungszentrum Jülich
D-52425 Jülich

RWTH Aachen
Uni Göttingen

 

Contact Imprint 12.12.2012
 VISel